?200 8 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet fdp51n25 / fdpF51N25 250v n-channel mosfet features ? 51a, 250v, r ds(on) = 0.06 @v gs = 10 v ? low gate charge ( typical 55 nc) ? low crss ( typical 63 pf) ?fast switching ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide super io r switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. absolute maximum ratings *drain current limited by maximum junction temperature thermal characteristics to-220 fdp series g s d to-220f fdpf series g s d d g s symbol parameter fdp51n25 fdpF51N25 unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 51 30 51* 30* a a i dm drain current - pulsed (note 1) 204 204* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1111 mj i ar avalanche current (note 1) 51 a e ar repetitive avalanche energy (note 1) 32 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 320 3.7 38 0.3 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fdp51n25 fdpF51N25 unit r jc thermal resistance, junction-to-case 0.39 3.3 c/w r cs thermal resistance, case-to-sink typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w j july 2008 unifet tm
2 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by m aximum junction temperature 2. l = 0.68mh, i as = 51a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 51a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, du ty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fdp51n25 fdp51n25 to-220 - - 50 fdpF51N25 fdpF51N25 to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 250 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.25 -- v/ c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 25.5a -- 0.048 0.060 g fs forward transconductance v ds = 40v, i d = 25.5a (note 4) -- 43 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2620 3410 pf c oss output capacitance -- 530 690 pf c rss reverse transfer capacitance -- 63 90 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 51a r g = 25 (note 4, 5) -- 62 135 ns t r turn-on rise time -- 465 940 ns t d(off) turn-off delay time -- 98 205 ns t f turn-off fall time -- 130 270 ns q g total gate charge v ds = 200v, i d = 51a v gs = 10v (note 4, 5) -- 55 70 nc q gs gate-source charge -- 16 -- nc q gd gate-drain charge -- 27 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 51 a i sm maximum pulsed drain-source diode forward current -- -- 204 a v sd drain-source diode forward voltage v gs = 0v, i s = 51a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 51a di f /dt =100a/ s (note 4) -- 178 -- ns q rr reverse recovery charge -- 4.0 -- c
3 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage v ariation vs. s ource cur rent and temperatue figure 5. capacitance characteristics f igure 6. gat e charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681 01 2 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 150 0.04 0.06 0.08 0.10 0.12 0.14 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.61.8 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 2000 4000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1 02 03 04 05 06 0 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v * note : i d = 51a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. t e mperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. m aximum safe operating area for fdp51n25 for fdpF51N25 figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 25.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fdp51n25 figure 11-2. transient thermal response curve for fdpF51N25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * notes : 1. z jc (t) = 0.39 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 3.3 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
6 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
7 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
8 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet mechanical dimensions dimensions in millimeters $ % $ ? ? ? % 0 , 1 to -220
9 www.fairchildsemi.com fdp51n25 / fdpF51N25 rev. b fdp51n25 / fdpF51N25 250v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f dimensions in millimeters
rev. i35 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? uhc ? ultra frfet? unifet? vcx? visualmax? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards fo r handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 10 www.fairchildsemi.com fdp51n25 / fdpF51N25 250v n-channel mosfet fdp51n25 / fdpF51N25 rev. b
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